发明申请
- 专利标题： IMPRINT MASK MANUFACTURING METHOD, IMPRINT MASK MANUFACTURING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 专利标题（中）： 印刷掩模制造方法，印刷掩模制造装置和半导体器件制造方法
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申请号： US13326612申请日： 2011-12-15
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公开(公告)号： US20120091370A1公开(公告)日： 2012-04-19
- 发明人: Masamitsu Itoh
- 申请人： Masamitsu Itoh
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-003504 20080110
- 主分类号： G21K5/00
- IPC分类号： G21K5/00
摘要：
A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.
公开/授权文献
- US08502171B2 Mask manufacturing device 公开/授权日：2013-08-06
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