发明申请
- 专利标题: THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 薄膜晶体管基板及其制造方法
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申请号: US13219379申请日: 2011-08-26
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公开(公告)号: US20120091461A1公开(公告)日: 2012-04-19
- 发明人: Joo-Han KIM , Wan-Soon Im , Jae-Hak Lee , Se-Myung Kwon , So-Young Koo
- 申请人: Joo-Han KIM , Wan-Soon Im , Jae-Hak Lee , Se-Myung Kwon , So-Young Koo
- 优先权: KR10-2010-0102106 20101019
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336
摘要:
A thin film transistor display substrate and a method of manufacturing the same are provided. The thin film transistor substrate includes a gate electrode formed on a display substrate, an active layer formed on the gate electrode to overlap with the gate electrode and including polycrystalline silicon, a first ohmic contact layer formed on the active layer, a second ohmic contact layer formed on the first ohmic contact layer, and a source electrode and a drain electrode each formed on the second ohmic contact layer.