发明申请
US20120091471A1 LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES
有权
轻质硅碳化硅陶瓷及其在大功率器件中的应用
- 专利标题： LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES
- 专利标题（中）： 轻质硅碳化硅陶瓷及其在大功率器件中的应用
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申请号： US13340192申请日： 2011-12-29
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公开(公告)号： US20120091471A1公开(公告)日： 2012-04-19
- 发明人: Alexandre ELLISON , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
- 申请人： Alexandre ELLISON , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
- 申请人地址： DE Erlangen SE Norrkoping
- 专利权人： SICED ELECTRONICS DEVELOPMENT GMBH,NORSTEL AB
- 当前专利权人： SICED ELECTRONICS DEVELOPMENT GMBH,NORSTEL AB
- 当前专利权人地址： DE Erlangen SE Norrkoping
- 优先权： SE0202585-6 20020830
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/24
摘要：
A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.
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