发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 半导体存储器件
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申请号： US12982825申请日： 2010-12-30
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公开(公告)号： US20120092935A1公开(公告)日： 2012-04-19
- 发明人: Sook Joo KIM , Min Gyu Sung
- 申请人： Sook Joo KIM , Min Gyu Sung
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2010-0100263 20101014
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; H01L29/82 ; H01L45/00 ; H01L29/792
摘要：
A semiconductor memory device includes a first memory device formed on a semiconductor substrate, including a first storage unit, a source, and a drain, a second memory device, including a second storage unit, and a bit line, wherein the second memory device is connected in series between the bit line and the drain.
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