发明申请
US20120094435A1 METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM
有权
AI / GE在WAFER包装环境中的粘合方法及其生产的产品
- 专利标题： METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM
- 专利标题（中）： AI / GE在WAFER包装环境中的粘合方法及其生产的产品
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申请号： US13333580申请日： 2011-12-21
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公开(公告)号： US20120094435A1公开(公告)日： 2012-04-19
- 发明人: Steven S. Nasiri , Anthony Francis Flannery, JR.
- 申请人： Steven S. Nasiri , Anthony Francis Flannery, JR.
- 申请人地址： US CA Sunnyvale
- 专利权人： Invensense Inc.
- 当前专利权人： Invensense Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/50
- IPC分类号： H01L21/50 ; H01L21/762
摘要：
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
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