Invention Application
- Patent Title: DUMMY GATE FOR A HIGH VOLTAGE TRANSISTOR DEVICE
- Patent Title (中): 用于高电压晶体管器件的DUMMY GATE
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Application No.: US12910000Application Date: 2010-10-22
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Publication No.: US20120098063A1Publication Date: 2012-04-26
- Inventor: Yung-Chih Tsai , Han-Chung Lin
- Applicant: Yung-Chih Tsai , Han-Chung Lin
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a first doped region and a second doped region both formed in a substrate. The first and second doped regions are oppositely doped. The semiconductor device includes a first gate formed over the substrate. The first gate overlies a portion of the first doped region and a portion of the second doped region. The semiconductor device includes a second gate formed over the substrate. The second gate overlies a different portion of the second doped region. The semiconductor device includes a first voltage source that provides a first voltage to the second gate. The semiconductor device includes a second voltage source that provides a second voltage to the second doped region. The first and second voltages are different from each other.
Public/Granted literature
- US08552495B2 Dummy gate for a high voltage transistor device Public/Granted day:2013-10-08
Information query
IPC分类:
