发明申请
- 专利标题： Vertical Memory Devices And Methods Of Manufacturing The Same
- 专利标题（中）： 垂直存储器件及其制造方法
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申请号： US13246152申请日： 2011-09-27
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公开(公告)号： US20120098139A1公开(公告)日： 2012-04-26
- 发明人: Soo-Doo Chae , Ki-Hyun Hwang , Han-Mei Choi , Dong-Chul Yoo
- 申请人： Soo-Doo Chae , Ki-Hyun Hwang , Han-Mei Choi , Dong-Chul Yoo
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0102718 20101021
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/44
摘要：
A vertical memory device includes a channel, a ground selection line (GSL), word lines, a string selection line (SSL), and a contact. The channel includes a vertical portion and a horizontal portion. The vertical portion extends in a first direction substantially perpendicular to a top surface of a substrate, and the horizontal portion is connected to the vertical portion and parallel to the top surface of the substrate. The GSL, the word lines and the SSL are formed on a sidewall of the vertical portion of the channel sequentially in the first direction, and are spaced apart from each other. The contact is on the substrate and electrically connected to the horizontal portion of the channel.
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