Invention Application
- Patent Title: METHOD OF OPERATING A PHASE-CHANGE MEMORY DEVICE
- Patent Title (中): 操作相变存储器件的方法
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Application No.: US13343383Application Date: 2012-01-04
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Publication No.: US20120099371A1Publication Date: 2012-04-26
- Inventor: Cheol-kyu KIM , Yoon-ho Khang , Ki-joon Kim
- Applicant: Cheol-kyu KIM , Yoon-ho Khang , Ki-joon Kim
- Priority: KR10-2007-0122737 20071129
- Main IPC: G11C11/21
- IPC: G11C11/21
Abstract:
A method of operating a phase-change memory device including a phase-change layer and a unit applying a voltage to the phase-change layer is provided. The method includes applying a reset voltage to the phase-change layer, wherein the reset voltage includes at least two pulse voltages which are continuously applied.
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