发明申请
US20120104469A1 REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
有权
具有高性能门电极的替代栅极MOSFET
- 专利标题： REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- 专利标题（中）： 具有高性能门电极的替代栅极MOSFET
-
申请号： US12912963申请日： 2010-10-27
-
公开(公告)号： US20120104469A1公开(公告)日： 2012-05-03
- 发明人: Zhengwen Li , Dechao Guo , Randolph F. Knarr , Chengwen Pei , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong , Jian Yu , Jun Yuan
- 申请人： Zhengwen Li , Dechao Guo , Randolph F. Knarr , Chengwen Pei , Gan Wang , Yanfeng Wang , Keith Kwong Hon Wong , Jian Yu , Jun Yuan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
公开/授权文献
信息查询
IPC分类:
