发明申请
- 专利标题： ELECTRONIC DEVICE WITH ASYMMETRIC GATE STRAIN
- 专利标题（中）： 具有不对称栅极应变的电子器件
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申请号： US13345446申请日： 2012-01-06
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公开(公告)号： US20120104476A1公开(公告)日： 2012-05-03
- 发明人: Gurtej S. Sandhu , Kunal R. Parekh
- 申请人： Gurtej S. Sandhu , Kunal R. Parekh
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.
公开/授权文献
- US08803240B2 Electronic device with asymmetric gate strain 公开/授权日：2014-08-12
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