发明申请
- 专利标题： AVALANCHE PHOTODIODES AND METHODS OF FABRICATING THE SAME
- 专利标题（中）： AVALANCHE光电及其制造方法
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申请号： US13191758申请日： 2011-07-27
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公开(公告)号： US20120104531A1公开(公告)日： 2012-05-03
- 发明人: Mi-Ran PARK , O-Kyun Kwon
- 申请人： Mi-Ran PARK , O-Kyun Kwon
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2010-0108685 20101103
- 主分类号： H01L31/0216
- IPC分类号： H01L31/0216 ; H01L31/18
摘要：
Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.