发明申请
- 专利标题: LITHOGRAPHY USING PHOTORESIST WITH PHOTOINITIATOR AND PHOTOINHIBITOR
- 专利标题(中): 使用光敏剂和光敏剂的光刻胶的光刻
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申请号: US13123816申请日: 2010-11-03
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公开(公告)号: US20120107743A1公开(公告)日: 2012-05-03
- 发明人: Seth Miller
- 申请人: Seth Miller
- 申请人地址: US DE Wilmington
- 专利权人: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- 当前专利权人: EMPIRE TECHNOLOGY DEVELOPMENT LLC
- 当前专利权人地址: US DE Wilmington
- 国际申请: PCT/US10/55269 WO 20101103
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F7/029 ; G03B27/00 ; G03F7/004 ; B82Y40/00
摘要:
Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a photoinitiator and a photoinhibitor. The photoinitiator may be effective to generate a first reactant upon the absorption of at least one photon of a particular wavelength of light. The first reactant may be effective to render the resin soluble or insoluble in a photoresist developer. The photoinhibitor may be effective to generate a second reactant upon the absorption of at least one photon of the particular wavelength of light. The second reactant may be effective to inhibit the first reactant.
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