发明申请
- 专利标题： MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION
- 专利标题（中）： 磁性隧道连接装置和制造
-
申请号： US13349633申请日： 2012-01-13
-
公开(公告)号： US20120107966A1公开(公告)日： 2012-05-03
- 发明人: Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
- 申请人： Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; G06F9/45
摘要：
A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
公开/授权文献
- US08580583B2 Magnetic tunnel junction device and fabrication 公开/授权日：2013-11-12
信息查询
IPC分类:
