发明申请
US20120107983A1 METHOD OF FABRICATING ARRAY SUBSTRATE 有权
方法制作阵列基板

  • 专利标题: METHOD OF FABRICATING ARRAY SUBSTRATE
  • 专利标题(中): 方法制作阵列基板
  • 申请号: US13225080
    申请日: 2011-09-02
  • 公开(公告)号: US20120107983A1
    公开(公告)日: 2012-05-03
  • 发明人: Hee-Dong Choi
  • 申请人: Hee-Dong Choi
  • 优先权: KR10-2010-0100272 20101102
  • 主分类号: H01L33/08
  • IPC分类号: H01L33/08
METHOD OF FABRICATING ARRAY SUBSTRATE
摘要:
A method of fabricating an array substrate including forming a first metal layer; forming a gate insulating layer and an active layer; forming a second metal layer; forming a gate line, an etch-stopper and a gate electrode by patterning the first and second metal layers; forming an interlayer insulating layer including an opening, wherein the opening corresponds to the etch-stopper such that the opening is divided into first and second semiconductor contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact layers, a source electrode, a drain electrode and a data line, the first and second ohmic contact layers respectively contacting both sides of the active layer through the first and second semiconductor contact holes; removing an exposed portion of the etch-stopper; and forming a pixel electrode contacting the drain electrode.
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