发明申请
- 专利标题: METHOD OF FABRICATING ARRAY SUBSTRATE
- 专利标题(中): 方法制作阵列基板
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申请号: US13225080申请日: 2011-09-02
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公开(公告)号: US20120107983A1公开(公告)日: 2012-05-03
- 发明人: Hee-Dong Choi
- 申请人: Hee-Dong Choi
- 优先权: KR10-2010-0100272 20101102
- 主分类号: H01L33/08
- IPC分类号: H01L33/08
摘要:
A method of fabricating an array substrate including forming a first metal layer; forming a gate insulating layer and an active layer; forming a second metal layer; forming a gate line, an etch-stopper and a gate electrode by patterning the first and second metal layers; forming an interlayer insulating layer including an opening, wherein the opening corresponds to the etch-stopper such that the opening is divided into first and second semiconductor contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact layers, a source electrode, a drain electrode and a data line, the first and second ohmic contact layers respectively contacting both sides of the active layer through the first and second semiconductor contact holes; removing an exposed portion of the etch-stopper; and forming a pixel electrode contacting the drain electrode.
公开/授权文献
- US08440483B2 Method of fabricating array substrate 公开/授权日:2013-05-14
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