发明申请
US20120112203A1 GROUP-III NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE, AND EPITAXIAL SUBSTRATE
有权
III族氮化物半导体器件,制备III族氮化物半导体器件的方法和外延衬底
- 专利标题: GROUP-III NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE, AND EPITAXIAL SUBSTRATE
- 专利标题(中): III族氮化物半导体器件,制备III族氮化物半导体器件的方法和外延衬底
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申请号: US13289813申请日: 2011-11-04
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公开(公告)号: US20120112203A1公开(公告)日: 2012-05-10
- 发明人: Yohei ENYA , Takashi KYONO , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Koji NISHIZUKA
- 申请人: Yohei ENYA , Takashi KYONO , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Koji NISHIZUKA
- 申请人地址: JP Osaka-shi
- 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP Osaka-shi
- 优先权: JP2010-248932 20101105
- 主分类号: H01L29/20
- IPC分类号: H01L29/20 ; H01L33/02
摘要:
Provided is a Group III nitride semiconductor device, which comprises an electrically conductive substrate including a primary surface comprised of a first gallium nitride based semiconductor, and a Group III nitride semiconductor region including a first p-type gallium nitride based semiconductor layer and provided on the primary surface. The primary surface of the substrate is inclined at an angle in the range of not less than 50 degrees, and less than 130 degrees from a plane perpendicular to a reference axis extending along the c-axis of the first gallium nitride based semiconductor, an oxygen concentration Noxg of the first p-type gallium nitride based semiconductor layer is not more than 5×1017 cm−3, and a ratio (Noxg/Npd) of the oxygen concentration Noxg to a p-type dopant concentration Npd of the first p-type gallium nitride based semiconductor layer is not more than 1/10.