发明申请
- 专利标题： LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR WAFERS WITH SUBSEQUENT SELF ALIGNED SHALLOW TRENCH ISOLATION
- 专利标题（中）： 具有后续自对准的双盒式背盖的低成本制造硅绝缘体波纹
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申请号： US13350889申请日： 2012-01-16
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公开(公告)号： US20120112309A1公开(公告)日： 2012-05-10
- 发明人: Robert H. Dennard , David R. Greenberg , Amlan Majumdar , Leathen Shi , Jeng-Bang Yau
- 申请人： Robert H. Dennard , David R. Greenberg , Amlan Majumdar , Leathen Shi , Jeng-Bang Yau
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/762
摘要：
A semiconductor substrate structure for manufacturing integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate, the lower insulating layer formed from a pair of separate insulation layers having a bonding interface therebetween; an electrically conductive layer formed on the lower insulating layer; an insulator with etch stop characteristics formed on the electrically conductive layer; an upper insulating layer formed on the etch stop layer; and a semiconductor layer formed on the upper insulating layer. A scheme of subsequently building a dual-depth shallow trench isolation with the deeper STI in the back gate layer self-aligned to the shallower STI in the active region in such a semiconductor substrate is also disclosed.
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