Invention Application
- Patent Title: Anti-Fuse Element
- Patent Title (中): 防熔元件
-
Application No.: US13354637Application Date: 2012-01-20
-
Publication No.: US20120112313A1Publication Date: 2012-05-10
- Inventor: Shinsuke Tani , Toshiyuki Nakaiso
- Applicant: Shinsuke Tani , Toshiyuki Nakaiso
- Applicant Address: JP Nagaokakyo-Shi
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Nagaokakyo-Shi
- Priority: JP2009-171194 20090722
- Main IPC: H01L23/525
- IPC: H01L23/525

Abstract:
An anti-fuse element that includes an insulation layer; a pair of electrode layers on the upper and lower surfaces of the insulation layer; and an extraction electrode formed so as to make contact with a section of the electrode layers that form electrostatic capacitance with the insulation layer. The anti-fuse element is configured to create a structural change section including short circuit sections that are short-circuited such that the pair of electrode layers are fused mutually to engulf the insulation layer, and a dissipation section with the electrode layers and insulation layer dissipated by engulfing the insulation layer, when a voltage not less than the breakdown voltage of the insulation layer is applied. Furthermore, the extraction electrode has at least two or more sections in contact with the electrode layer.
Public/Granted literature
- US08664744B2 Anti-fuse element without defective opens Public/Granted day:2014-03-04
Information query
IPC分类: