Invention Application
US20120112362A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
半导体器件及其制造方法

  • Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
  • Patent Title (中): 半导体器件及其制造方法
  • Application No.: US13290379
    Application Date: 2011-11-07
  • Publication No.: US20120112362A1
    Publication Date: 2012-05-10
  • Inventor: Yong Chul SHIN
  • Applicant: Yong Chul SHIN
  • Priority: KR10-2010-0110389 20101108
  • Main IPC: H01L23/522
  • IPC: H01L23/522 H01L21/76 H01L21/768
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Abstract:
A semiconductor device includes a first line pattern and a second line pattern formed in parallel on a semiconductor substrate, third line patterns formed in parallel between the first line pattern and the second line pattern, fourth line patterns formed in parallel between the first line pattern and the second line pattern, a first connection structure configured to couple a first of the third line patterns with a first of the fourth lines patterns, which are adjacent to the first line pattern, and a second connection structure configured to couple a second of the first lines patterns with a second of the fourth lines patterns, which are adjacent to the second line pattern.
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