发明申请
- 专利标题： TFT CHARGE STORAGE MEMORY CELL HAVING HIGH-MOBILITY CORRUGATED CHANNEL
- 专利标题（中）： TFT充电存储单元具有高移动性通道
-
申请号： US13351456申请日： 2012-01-17
-
公开(公告)号： US20120115289A1公开(公告)日： 2012-05-10
- 发明人: Roy E. Scheuerlein
- 申请人： Roy E. Scheuerlein
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is non-planar in shape.
公开/授权文献
信息查询
IPC分类:
