发明申请
- 专利标题: HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 高效发光二极管及其制造方法
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申请号: US13109669申请日: 2011-05-17
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公开(公告)号: US20120119243A1公开(公告)日: 2012-05-17
- 发明人: Chang Yeon KIM , Da Hye KIM , Hong Chul LIM , Joon Hee LEE , Jong Kyun YOU
- 申请人: Chang Yeon KIM , Da Hye KIM , Hong Chul LIM , Joon Hee LEE , Jong Kyun YOU
- 申请人地址: KR Ansan-si
- 专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人地址: KR Ansan-si
- 优先权: KR10-2010-0046532 20100518; KR10-2010-0092991 20100927; KR10-2010-0094298 20100929; KR10-2010-0101227 20101018
- 主分类号: H01L33/22
- IPC分类号: H01L33/22
摘要:
Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.