发明申请
- 专利标题: SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- 专利标题(中): 基板加工装置,制造半导体器件和半导体器件的方法
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申请号: US13289450申请日: 2011-11-04
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公开(公告)号: US20120119337A1公开(公告)日: 2012-05-17
- 发明人: Shinya Sasaki , Yuji Takebayashi , Shintaro Kogura
- 申请人: Shinya Sasaki , Yuji Takebayashi , Shintaro Kogura
- 申请人地址: JP Tokyo
- 专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-253231 20101111
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; H01L21/31 ; C23C16/52
摘要:
Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.