发明申请
- 专利标题： ELECTROMIGRATION RESISTANT VIA-TO-LINE INTERCONNECT
- 专利标题（中）： 通过电路互连连接
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申请号： US13356013申请日： 2012-01-23
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公开(公告)号： US20120119366A1公开(公告)日： 2012-05-17
- 发明人: Baozhen Li , Paul S. McLaughlin , Timothy D. Sullivan
- 申请人： Baozhen Li , Paul S. McLaughlin , Timothy D. Sullivan
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/532
- IPC分类号： H01L23/532
摘要：
A liner-to-liner direct contact is formed between an upper metallic liner of a conductive via and a lower metallic liner of a metal line below. The liner-to-liner contact impedes abrupt electromigration failures and enhances electromigration resistance of the metal interconnect structure. The at least one dielectric material portion may include a plurality of dielectric material portions arranged to insure direct contact of between the upper metallic liner and the lower metallic liner. Alternatively, the at least one dielectric material portion may comprise a single dielectric portion of which the area has a sufficient lateral overlap with the area of the conductive via to insure that a liner-to-liner direct contact is formed within the range of allowed lithographic overlay variations.
公开/授权文献
- US08922022B2 Electromigration resistant via-to-line interconnect 公开/授权日：2014-12-30