发明申请
- 专利标题： KEY STRUCTURE AND CAPACITIVE SENSING DEVICE USING THE SAME THEREOF
- 专利标题（中）： 关键结构和电容式感应装置
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申请号： US13297285申请日： 2011-11-16
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公开(公告)号： US20120119996A1公开(公告)日： 2012-05-17
- 发明人: Wen-Yen Wu , Chih-Ming Chang
- 申请人： Wen-Yen Wu , Chih-Ming Chang
- 申请人地址： TW Taoyuan Shien
- 专利权人： QISDA CORPORATION
- 当前专利权人： QISDA CORPORATION
- 当前专利权人地址： TW Taoyuan Shien
- 优先权： TW99139439 20101116
- 主分类号： G06F3/02
- IPC分类号： G06F3/02
摘要：
A key structure and a capacitive sensing device using the same are provided. The key structure is disposed on the capacitive sensing panel. The key structure comprises a pressing portion and a support portion. The pressing portion has a pressing surface and a conductive surface opposite to the pressing surface. The pressing surface is connected to the conductive surface, which faces the capacitive sensing panel. The support portion is connected to the pressing portion. When the pressing portion is pressed, the conductive surface of the pressing portion is close to or touches the capacitive sensing panel.
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