发明申请
US20120120727A1 METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE
有权
在存储器件中提供操作电压的方法和用于存储器件的存储器控制器
- 专利标题： METHOD OF PROVIDING AN OPERATING VOLTAGE IN A MEMORY DEVICE AND A MEMORY CONTROLLER FOR THE MEMORY DEVICE
- 专利标题（中）： 在存储器件中提供操作电压的方法和用于存储器件的存储器控制器
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申请号： US13289282申请日： 2011-11-04
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公开(公告)号： US20120120727A1公开(公告)日： 2012-05-17
- 发明人: Moo Sung Kim , Wook Ghee Hahn
- 申请人： Moo Sung Kim , Wook Ghee Hahn
- 优先权： KR10-2010-0112110 20101111
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.
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