发明申请
US20120126171A1 Crystal Growth Atmosphere For Oxyorthosilicate Materials Production
审中-公开
氧化硅酸盐材料生产的晶体生长环境
- 专利标题： Crystal Growth Atmosphere For Oxyorthosilicate Materials Production
- 专利标题（中）： 氧化硅酸盐材料生产的晶体生长环境
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申请号： US12953582申请日： 2010-11-24
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公开(公告)号： US20120126171A1公开(公告)日： 2012-05-24
- 发明人: Mark S. Andreaco , Piotr Szupryczynski , A. Andrew Carey
- 申请人： Mark S. Andreaco , Piotr Szupryczynski , A. Andrew Carey
- 申请人地址： US PA Malvern
- 专利权人： SIEMENS MEDICAL SOLUTIONS USA, INC.
- 当前专利权人： SIEMENS MEDICAL SOLUTIONS USA, INC.
- 当前专利权人地址： US PA Malvern
- 主分类号： C09K11/79
- IPC分类号： C09K11/79 ; C30B15/04
摘要：
A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.
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