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发明申请
US20120126429A1 Semiconductor Device and Method of Forming Base Substrate with Recesses for Capturing Bumped Semiconductor Die 有权
半导体器件和形成具有用于捕获半导体芯片的凹槽的基底的方法

Semiconductor Device and Method of Forming Base Substrate with Recesses for Capturing Bumped Semiconductor Die
摘要：
A semiconductor device has a base substrate with recesses formed in a first surface of the base substrate. A first conductive layer is formed over the first surface and into the recesses. A second conductive layer is formed over a second surface of the base substrate. A first semiconductor die is mounted to the base substrate with bumps partially disposed within the recesses over the first conductive layer. A second semiconductor die is mounted to the first semiconductor die. Bond wires are formed between the second semiconductor die and the first conductive layer over the first surface of the base substrate. An encapsulant is deposited over the first and second semiconductor die and base substrate. A portion of the base substrate is removed from the second surface between the second conductive layer down to the recesses to form electrically isolated base leads for the bumps and bond wires.
摘要（中）：

半导体器件具有形成在基底基板的第一表面中的凹部的基底基板。 第一导电层形成在第一表面上并进入凹槽中。 在基底基板的第二表面上形成第二导电层。 第一半导体管芯安装到基底基板上，凸起部分设置在第一导电层的凹槽内。 第二半导体管芯安装到第一半导体管芯。 在第二半导体管芯和第一导电层之间的基底衬底的第一表面上形成接合线。 密封剂沉积在第一和第二半导体管芯和基底衬底上。 基底基板的一部分从第二导电层之间的第二表面移除到凹部，以形成用于凸块和接合线的电隔离的基底引线。

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