发明申请
- 专利标题： Process of Fabricating Semiconductor Device and Through Substrate via, and Through Substrate via Structure Therefrom
- 专利标题（中）： 制造半导体器件和通过衬底通过衬底通过结构的工艺
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申请号： US13303208申请日： 2011-11-23
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公开(公告)号： US20120133049A1公开(公告)日： 2012-05-31
- 发明人: Chia-Sheng Lin , Chien-Hui Chen , Bing-Siang Chen , Tzu-Hsiang Hung
- 申请人： Chia-Sheng Lin , Chien-Hui Chen , Bing-Siang Chen , Tzu-Hsiang Hung
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L21/50 ; H01L21/768
摘要：
A method of fabricating a semiconductor device, a process of fabricating a through substrate via and a substrate with through vias are provided. The substrate with through vias includes a semiconductor substrate having a back surface and a via penetrating the back surface, a metal layer, a first insulating layer and a second insulating layer. The first insulating layer is formed on the back surface of the substrate and has an opening connected to the through via. The second insulating layer is formed on the first insulating layer and has a portion extending into the opening and the via to form a trench insulating layer. The bottom of the trench insulating layer is etched back to form a footing portion at the corner of the via. The footing portion has a height less than a total height of the first and second insulating layers.
公开/授权文献
- US08878367B2 Substrate structure with through vias 公开/授权日：2014-11-04
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