发明申请
- 专利标题: LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE
- 专利标题(中): 电平移位电路和半导体器件
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申请号: US13218154申请日: 2011-08-25
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公开(公告)号: US20120133416A1公开(公告)日: 2012-05-31
- 发明人: Yasushige OGAWA
- 申请人: Yasushige OGAWA
- 申请人地址: JP Yokohama
- 专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址: JP Yokohama
- 优先权: JP2010-266925 20101130
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
A level shift circuit including a level conversion unit that converts an input signal having a signal level of a first voltage into a signal having a signal level of a second voltage that is higher than the first voltage. The level conversion unit includes first and second MOS transistors of a first conductivity type and third and fourth MOS transistors of a second conductivity type, which differs from the first conductivity type and of which switching is controlled in accordance with the input signal. The third and fourth MOS transistors include drains supplied with the second voltage via the first and second MOS transistors, respectively. A control unit, when detecting a decrease in the first voltage, controls a body bias of the third and fourth MOS transistors to decrease a threshold voltage of the third and fourth MOS transistors.
公开/授权文献
- US08542051B2 Level shift circuit and semiconductor device 公开/授权日:2013-09-24
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