发明申请
- 专利标题： Apparatus and Process for Atomic Layer Deposition
- 专利标题（中）： 原子层沉积的装置和工艺
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申请号： US12956650申请日： 2010-11-30
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公开(公告)号： US20120135609A1公开(公告)日： 2012-05-31
- 发明人: Joseph Yudovsky , Tatsuya Sato , Kenric Choi , Anh N. Nguyen , Faruk Gungor
- 申请人： Joseph Yudovsky , Tatsuya Sato , Kenric Choi , Anh N. Nguyen , Faruk Gungor
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; B67D7/06
摘要：
Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region.