发明申请
- 专利标题： THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 薄膜晶体管阵列及其制造方法
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申请号： US13099108申请日： 2011-05-02
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公开(公告)号： US20120138920A1公开(公告)日： 2012-06-07
- 发明人: Yoon Ho KHANG , Se Hwan YU , Chong Sup CHANG , Sang Ho PARK , Su-Hyoung KANG
- 申请人： Yoon Ho KHANG , Se Hwan YU , Chong Sup CHANG , Sang Ho PARK , Su-Hyoung KANG
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0121337 20101201
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/336
摘要：
A thin film transistor array panel is provided that includes: a gate electrode that is disposed on an insulating substrate; a gate insulating layer that is disposed on the gate electrode; an oxide semiconductor that is disposed on the gate insulating layer; a blocking layer that is disposed on the oxide semiconductor; a source electrode and a drain electrode that are disposed on the blocking layer; a passivation layer that is disposed on the source electrode and drain electrode; and a pixel electrode that is disposed on the passivation layer. The blocking layer includes a first portion that is covered by the source electrode and drain electrode and a second portion that is not covered by the source electrode and drain electrode, and the first portion and the second portion include different materials.