发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器及其制造方法
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申请号： US13050297申请日： 2011-03-17
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公开(公告)号： US20120139024A1公开(公告)日： 2012-06-07
- 发明人: Takayuki TOBA , Tohru Ozaki
- 申请人： Takayuki TOBA , Tohru Ozaki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2010-268481 20101201
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/336
摘要：
In one embodiment, a nonvolatile semiconductor memory includes a memory cell array, a first silicon nitride film and a second silicon nitride film. The memory cell array includes NAND cell units. Each of the NAND cell units has memory cell transistors, a source-side select gate transistor and a drain-side select gate transistor. The source-side select gate transistors is disposed in such a manner as to face each other and the drain-side select gate transistors is disposed in such a manner as to face each other. The first silicon nitride film is present in a region between the source-side select gate transistors and is disposed at a position lowest from the upper surface of the semiconductor substrate. The second silicon nitride film is formed in a region between the drain-side select gate transistors and is disposed at a position lowest from the upper surface of the semiconductor substrate.
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