- 专利标题: COPPER INTERCONNECT STRUCTURE HAVING A GRAPHENE CAP
- 专利标题(中): 铜箔互连结构
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申请号: US12961251申请日: 2010-12-06
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公开(公告)号: US20120139114A1公开(公告)日: 2012-06-07
- 发明人: John Hongguang Zhang , Cindy Goldberg , Walter Kleemeier , Ronald Kevin Sampson
- 申请人: John Hongguang Zhang , Cindy Goldberg , Walter Kleemeier , Ronald Kevin Sampson
- 申请人地址: US TX Carrollton
- 专利权人: STMicroelectronics, Inc.
- 当前专利权人: STMicroelectronics, Inc.
- 当前专利权人地址: US TX Carrollton
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L21/4763
摘要:
A copper interconnect structure has an intrinsic graphene cap for improving back end of line (BEOL) reliability of the interconnect by reducing time-dependent dielectric breakdown (TDDB) failure and providing resistance to electromigration. Carbon atoms are selectively deposited onto a copper layer of the interconnect structure by a deposition process to form a graphene cap. The graphene cap increases the activation energy of the copper, thus allowing for higher current density and improved resistance to electromigration of the copper. By depositing the graphene cap on the copper, the dielectric regions remain free of conductors and, thus, current leakage within the interlayer dielectric regions is reduced, thereby reducing TDDB failure and increasing the lifespan of the interconnect structure. The reduction of TDDB failure and improved resistance to electromigration improves BEOL reliability of the copper interconnect structure.
公开/授权文献
- US08476765B2 Copper interconnect structure having a graphene cap 公开/授权日:2013-07-02