Invention Application
- Patent Title: GRAPHENE STRUCTURE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 石墨结构及其制造方法
-
Application No.: US13229183Application Date: 2011-09-09
-
Publication No.: US20120141700A1Publication Date: 2012-06-07
- Inventor: Byoung-lyong CHOI , Eun-kyung LEE , Dong-mok WHANG
- Applicant: Byoung-lyong CHOI , Eun-kyung LEE , Dong-mok WHANG
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2010-0124233 20101207
- Main IPC: B32B1/08
- IPC: B32B1/08 ; C23C16/56 ; B05D3/00 ; B32B3/00 ; B32B3/10 ; C23C16/26 ; C23F1/00 ; B82Y40/00
Abstract:
A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
Public/Granted literature
- US09230801B2 Graphene structure and method of fabricating the same Public/Granted day:2016-01-05
Information query
