发明申请
US20120144272A1 PROBABILISTIC MULTI-TIER ERROR CORRECTION IN NOT-AND (NAND) FLASH MEMORY
有权
非 - 和(NAND)闪存中的概念多层错误校正
- 专利标题: PROBABILISTIC MULTI-TIER ERROR CORRECTION IN NOT-AND (NAND) FLASH MEMORY
- 专利标题(中): 非 - 和(NAND)闪存中的概念多层错误校正
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申请号: US12960004申请日: 2010-12-03
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公开(公告)号: US20120144272A1公开(公告)日: 2012-06-07
- 发明人: Michele M. Franceschini , Ashish Jagmohan , Luis A. Lastras-Montano , Mayank Sharma
- 申请人: Michele M. Franceschini , Ashish Jagmohan , Luis A. Lastras-Montano , Mayank Sharma
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H03M13/05
- IPC分类号: H03M13/05 ; G06F11/10
摘要:
Error correction in not-and (NAND) flash memory including a system for retrieving data from memory. The system includes a decoder in communication with a memory. The decoder is for performing a method that includes receiving a codeword stored on a page in the memory, the codeword including data and first-tier check symbols that are generated in response to the data. The method further includes determining that the codeword includes errors that cannot be corrected using the first-tier check symbols, and in response second-tier check symbols are received. The second-tier check symbols are generated in response to receiving the data and to the contents of other pages in the memory that were written prior to the page containing the codeword. The codeword is corrected in response to the second-tier check symbols. The corrected codeword is output.
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