发明申请
US20120144361A1 PARAMETERIZED DUMMY CELL INSERTION FOR PROCESS ENHANCEMENT
有权
用于过程增强的参数化DUMMY CELL插入
- 专利标题: PARAMETERIZED DUMMY CELL INSERTION FOR PROCESS ENHANCEMENT
- 专利标题(中): 用于过程增强的参数化DUMMY CELL插入
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申请号: US12959150申请日: 2010-12-02
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公开(公告)号: US20120144361A1公开(公告)日: 2012-06-07
- 发明人: Ying-Chou Cheng , Tsong-Hua Ou , Wen-Hao Liu , Ru-Gun Liu , Wen-Chun Huang
- 申请人: Ying-Chou Cheng , Tsong-Hua Ou , Wen-Hao Liu , Ru-Gun Liu , Wen-Chun Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
The present disclosure relates to parameterized dummy cell insertion for process enhancement and methods for fabricating the same. In accordance with one or more embodiments, methods include providing an integrated circuit (IC) design layout with defined pixel-units, simulating thermal effect to the IC design layout including each pixel-unit, generating a thermal effect map of the IC design layout including each pixel-unit, determining a target absorption value for the IC design layout, and performing thermal dummy cell insertion to each pixel-unit of the IC design layout based on the determined target absorption value.
公开/授权文献
- US08332797B2 Parameterized dummy cell insertion for process enhancement 公开/授权日:2012-12-11
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