发明申请
- 专利标题： PLASMA PROCESSING APPARATUS AND METHOD
- 专利标题（中）： 等离子体加工设备和方法
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申请号： US13396181申请日： 2012-02-14
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公开(公告)号： US20120145324A1公开(公告)日： 2012-06-14
- 发明人: Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
- 申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
- 优先权： JP2004-183093 20040621; JP2005-013912 20050121; JP2005-045095 20050222
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
公开/授权文献
- US08790490B2 Plasma processing apparatus and method 公开/授权日：2014-07-29
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