发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US13237697申请日： 2011-09-20
-
公开(公告)号： US20120146053A1公开(公告)日： 2012-06-14
- 发明人: Masumi SAITOH , Toshinori Numata , Yukio Nakabayashi , Kensuke Ota
- 申请人： Masumi SAITOH , Toshinori Numata , Yukio Nakabayashi , Kensuke Ota
- 优先权： JP2010-273271 20101208
- 主分类号： H01L29/161
- IPC分类号： H01L29/161 ; H01L21/336 ; H01L29/78
摘要：
A semiconductor device according to an embodiment includes a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, first gate sidewalls formed on both sides of the gate electrode, and a source/drain semiconductor layer formed on the semiconductor substrate to sandwich the first gate sidewalls with the gate electrode. Further, second gate sidewalls are provided on the first gate sidewalls and the source/drain semiconductor layer at both sides of the gate electrode, wherein the boundary of each of the second gate sidewalls with each of the first gate sidewalls is terminated at the side surface of the gate electrode, and each of the second gate sidewalls has a smaller Young's modulus and a lower dielectric constant than each of the first gate sidewalls.