发明申请
- 专利标题: FRACTIONAL BITS IN MEMORY CELLS
- 专利标题(中): 记忆细胞中的分位
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申请号: US13403078申请日: 2012-02-23
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公开(公告)号: US20120147672A1公开(公告)日: 2012-06-14
- 发明人: William H. Radke
- 申请人: William H. Radke
- 申请人地址: US ID Boise
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID Boise
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
Methods, devices, modules, and systems for programming memory cells can include storing charges corresponding to a data state that represents an integer number of bits in a set of memory cells. Programming memory cells can include storing a charge in a cell of the set, where the charge corresponds to a programmed state, where the programmed state represents a fractional number of bits, and where the programmed state denotes a digit of the data state as expressed by a number in base N, where N is equal to 2B, rounded up to an integer, and where B is equal to the fractional number of bits represented by the programmed state.
公开/授权文献
- US08531877B2 Fractional bits in memory cells 公开/授权日:2013-09-10
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