Invention Application
- Patent Title: FRACTIONAL BITS IN MEMORY CELLS
- Patent Title (中): 记忆细胞中的分位
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Application No.: US13403078Application Date: 2012-02-23
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Publication No.: US20120147672A1Publication Date: 2012-06-14
- Inventor: William H. Radke
- Applicant: William H. Radke
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
Methods, devices, modules, and systems for programming memory cells can include storing charges corresponding to a data state that represents an integer number of bits in a set of memory cells. Programming memory cells can include storing a charge in a cell of the set, where the charge corresponds to a programmed state, where the programmed state represents a fractional number of bits, and where the programmed state denotes a digit of the data state as expressed by a number in base N, where N is equal to 2B, rounded up to an integer, and where B is equal to the fractional number of bits represented by the programmed state.
Public/Granted literature
- US08531877B2 Fractional bits in memory cells Public/Granted day:2013-09-10
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