发明申请
US20120149166A1 METHOD OF FORMING TITANIUM NITRADE (TiN) FILM, NONVOLATILE MEMORY DEVICE USING THE TiN FILM, AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICE
审中-公开
使用TiN膜形成钛铁（TiN）膜，非易失存储器件的方法和制造非易失性存储器件的方法
- 专利标题： METHOD OF FORMING TITANIUM NITRADE (TiN) FILM, NONVOLATILE MEMORY DEVICE USING THE TiN FILM, AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICE
- 专利标题（中）： 使用TiN膜形成钛铁（TiN）膜，非易失存储器件的方法和制造非易失性存储器件的方法
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申请号： US13301047申请日： 2011-11-21
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公开(公告)号： US20120149166A1公开(公告)日： 2012-06-14
- 发明人: Young-Lim PARK , Jin-Il Lee , Kyung-Min Chung , Sug-Woo Jung , Chang-Su Kim
- 申请人： Young-Lim PARK , Jin-Il Lee , Kyung-Min Chung , Sug-Woo Jung , Chang-Su Kim
- 优先权： KR10-2010-0127107 20101213
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/768
摘要：
A method of manufacturing a nonvolatile memory device includes forming an insulating film pattern, which includes apertures, on a substrate, forming a switching element in each of the apertures, forming a bottom electrode on the switching element by using a silicon (Si)-doped titanium nitride (TiN) film, and forming a variable resistance material pattern on the bottom electrode. The Si-doped TiN film is formed by repeatedly forming a TiN film and doping the TiN film with Si.