发明申请
- 专利标题： HYDROGEN PASSIVATION OF INTEGRATED CIRCUITS
- 专利标题（中）： 氢气集成电路的钝化
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申请号： US13396420申请日： 2012-02-14
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公开(公告)号： US20120149189A1公开(公告)日： 2012-06-14
- 发明人: Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- 申请人： Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/31
摘要：
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.
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IPC分类:
