发明申请
- 专利标题： Semiconductor Device And Method Of Manufacturing The Same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13157681申请日： 2011-06-10
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公开(公告)号： US20120153261A1公开(公告)日： 2012-06-21
- 发明人: Jun-youn Kim , Su-hee Chae , Hyun-gi Hong , Young-jo Tak
- 申请人： Jun-youn Kim , Su-hee Chae , Hyun-gi Hong , Young-jo Tak
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0130001 20101217
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/205
摘要：
Example embodiments relate to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device may include a pre-seeding layer and a nucleation layer. The pre-seeding layer may include a first material for pre-seeding and a second material for masking so as to reduce tensile stress.
公开/授权文献
- US08541771B2 Semiconductor device and method of manufacturing the same 公开/授权日：2013-09-24