发明申请
US20120153402A1 EMBEDDED SIGMA-SHAPED SEMICONDUCTOR ALLOYS FORMED IN TRANSISTORS BY APPLYING A UNIFORM OXIDE LAYER PRIOR TO CAVITY ETCHING
有权
通过在空洞蚀刻前应用均匀的氧化物层在晶体管中形成的嵌入式SIGMA-形状的半导体合金
- 专利标题： EMBEDDED SIGMA-SHAPED SEMICONDUCTOR ALLOYS FORMED IN TRANSISTORS BY APPLYING A UNIFORM OXIDE LAYER PRIOR TO CAVITY ETCHING
- 专利标题（中）： 通过在空洞蚀刻前应用均匀的氧化物层在晶体管中形成的嵌入式SIGMA-形状的半导体合金
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申请号： US13238180申请日： 2011-09-21
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公开(公告)号： US20120153402A1公开(公告)日： 2012-06-21
- 发明人: Stephan Kronholz , Andreas Ott , Ina Ostermay
- 申请人： Stephan Kronholz , Andreas Ott , Ina Ostermay
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBAL FOUNDRIES Inc.
- 当前专利权人： GLOBAL FOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010063772.6 20101221
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/66
摘要：
When forming sophisticated transistors requiring an embedded semiconductor alloy, the cavities may be formed with superior uniformity on the basis of, for instance, crystallographically anisotropic etch steps by providing a uniform oxide layer in order to reduce process related fluctuations or queue time variations. The uniform oxide layer may be formed on the basis of an APC control regime.
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