发明申请
- 专利标题： METHOD AND STRUCTURE COMBINING VERTICAL AND ANGLED FACETS IN SILICON PHOTONIC WAVEGUIDES
- 专利标题（中）： 在硅光子波形中组合垂直和角质的方法和结构
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申请号： US12973585申请日： 2010-12-20
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公开(公告)号： US20120155820A1公开(公告)日： 2012-06-21
- 发明人: John Heck , Haisheng Rong
- 申请人： John Heck , Haisheng Rong
- 主分类号： G02B6/10
- IPC分类号： G02B6/10
摘要：
Embodiments of the invention use crystallographic etching of SOI wafers with a (110)-oriented epi layer to form both the vertical input facet and the re-entrant mirror. Proposed layout design combined with proposed orientation of the epi enables both vertical facets and re-entrant (upward-reflecting) mirror facets to be made in a single wafer-level wet etch process.
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