发明申请
US20120156839A1 Patterning of a Stressed Dielectric Material in a Contact Level Without Using an Underlying Etch Stop Layer
审中-公开
在不使用底层蚀刻停止层的情况下，接触层中的压电介电材料的图案化
- 专利标题： Patterning of a Stressed Dielectric Material in a Contact Level Without Using an Underlying Etch Stop Layer
- 专利标题（中）： 在不使用底层蚀刻停止层的情况下，接触层中的压电介电材料的图案化
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申请号： US13191870申请日： 2011-07-27
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公开(公告)号： US20120156839A1公开(公告)日： 2012-06-21
- 发明人: Thilo Scheiper , Sven Beyer , Jan Hoentschel , Stefan Flachowsky
- 申请人： Thilo Scheiper , Sven Beyer , Jan Hoentschel , Stefan Flachowsky
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010063298.8 20101216
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
An efficient strain-inducing mechanism may be implemented in the form of differently stressed material layers that are formed above transistors of different types. The strain-inducing dielectric materials may be formed so as to be in direct contact with the corresponding transistors, thereby enhancing the overall strain transfer efficiency. Moreover, the disclosed manufacturing strategy avoids or at least significantly reduces any interaction of reactive etch atmospheres used to pattern the strain-inducing material layers with metal silicide regions, which may be formed individually for each type of transistor.
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