发明申请
US20120156846A1 Semiconductor Devices Comprising a Channel Semiconductor Alloy Formed with Reduced STI Topography
有权
包含形成减少STI地形的通道半导体合金的半导体器件
- 专利标题: Semiconductor Devices Comprising a Channel Semiconductor Alloy Formed with Reduced STI Topography
- 专利标题(中): 包含形成减少STI地形的通道半导体合金的半导体器件
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申请号: US13191993申请日: 2011-07-27
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公开(公告)号: US20120156846A1公开(公告)日: 2012-06-21
- 发明人: Hans-Juergen Thees , Stephan Kronholz , Maciej Wiatr
- 申请人: Hans-Juergen Thees , Stephan Kronholz , Maciej Wiatr
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 优先权: DE102010063296.1 20101216
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/76
摘要:
In sophisticated semiconductor devices, a semiconductor alloy, such as a threshold adjusting semiconductor material in the form of silicon/germanium, may be provided in an early manufacturing stage selectively in certain active regions, wherein a pronounced degree of recessing and material loss, in particular in isolation regions, may be avoided by providing a protective material layer selectively above the isolation regions. For example, in some illustrative embodiments, a silicon material may be selectively deposited on the isolation regions.