发明申请
US20120161326A1 COMPOSITION FOR FILLING THROUGH SILICON VIA (TSV), TSV FILLING METHOD AND SUBSTRATE INCLUDING TSV PLUG FORMED OF THE COMPOSITION
审中-公开
用于通过硅（TSV）填充的组合物，TSV填充方法和包括形成组合物的TSV插入物的基底
- 专利标题： COMPOSITION FOR FILLING THROUGH SILICON VIA (TSV), TSV FILLING METHOD AND SUBSTRATE INCLUDING TSV PLUG FORMED OF THE COMPOSITION
- 专利标题（中）： 用于通过硅（TSV）填充的组合物，TSV填充方法和包括形成组合物的TSV插入物的基底
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申请号： US13330719申请日： 2011-12-20
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公开(公告)号： US20120161326A1公开(公告)日： 2012-06-28
- 发明人: Kwang-Seong Choi , Yong Sung Eom , Hyun-cheol Bae , Jong Tae Moon
- 申请人： Kwang-Seong Choi , Yong Sung Eom , Hyun-cheol Bae , Jong Tae Moon
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2010-0133657 20101223
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768
摘要：
Provided is a composition for filling a Through Silicon Via (TSV) including: a metal powder; a solder powder; a curable resin; a reducing agent; and a curing agent. A TSV filling method using the composition and a substrate including a TSV plug formed of the composition are also provided.
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