发明申请
- 专利标题: METHOD FOR MANUFACTURING LIGHTING DEVICE
- 专利标题(中): 制造照明装置的方法
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申请号: US13336356申请日: 2011-12-23
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公开(公告)号: US20120164761A1公开(公告)日: 2012-06-28
- 发明人: Shunpei YAMAZAKI , Yasuyuki ARAI , Naoto KUSUMOTO
- 申请人: Shunpei YAMAZAKI , Yasuyuki ARAI , Naoto KUSUMOTO
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2010-293534 20101228
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
An object is to provide a method for manufacturing a lighting device, in which a problem of a short circuit between an upper electrode and a lower electrode of a light-emitting element is solved without reducing a light-emitting property of a normal portion of the light-emitting element to the utmost. In a light-emitting element including an upper electrode, an electroluminescent layer, and a lower electrode, a short-circuited portion that is undesirably formed between the upper electrode and the lower electrode is irradiated with a laser beam, whereby a region where the short-circuited portion is removed is formed, and then the region is filled with an insulating resin having a light-transmitting property. Thus, the problem of the short circuit between the upper electrode and the lower electrode is solved and yield of a lighting device is improved.
公开/授权文献
- US08557614B2 Method for manufacturing lighting device 公开/授权日:2013-10-15