发明申请
- 专利标题: METHOD FOR FORMING NITRIDE FILM
- 专利标题(中): 形成氮化膜的方法
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申请号: US13338288申请日: 2011-12-28
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公开(公告)号: US20120164848A1公开(公告)日: 2012-06-28
- 发明人: Motoki FUJII , Masanobu MATSUNAGA , Kazuya YAMAMOTO , Kota UMEZAWA
- 申请人: Motoki FUJII , Masanobu MATSUNAGA , Kazuya YAMAMOTO , Kota UMEZAWA
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Tokyo Electron Limited,Elpida Memory, Inc.
- 当前专利权人: Tokyo Electron Limited,Elpida Memory, Inc.
- 当前专利权人地址: JP Tokyo JP Tokyo
- 优先权: JP2010-293379 20101228
- 主分类号: H01L21/318
- IPC分类号: H01L21/318
摘要:
A plasma-assisted ALD method using a vertical furnace and being performed by repeating a cycle until a desired film thickness is obtained is disclosed. The cycle comprises introducing a source gas containing a source to be nitrided, adsorbing, purging, introducing a nitriding gas and nitriding the source, and then, purging. A flow rate of a second carrier gas during introduction of the nitriding gas is reduced relative to that of a first carrier gas during introduction of the source gas. Particularly, a flow ratio of NH3 gas as the nitriding gas to N2 gas as the second carrier gas is 50:3 or less.