Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors

Invention Application

US20120168757A1 Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors 审中-公开

Title translation: 晶体管，制造方法和包括晶体管的电子器件

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Patent Title: Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors
Patent Title (中): 晶体管，制造方法和包括晶体管的电子器件
Application No.: US13165301

Application Date: 2011-06-21
Publication No.: US20120168757A1

Publication Date: 2012-07-05
Inventor: Kyung-bae Park , Myung-kwan Ryu , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Hyun-suk Kim , Wan-joo Maeng , Joon-seok Park
Applicant: Kyung-bae Park , Myung-kwan Ryu , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Hyun-suk Kim , Wan-joo Maeng , Joon-seok Park
Applicant Address: KR Suwon-si
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR Suwon-si
Priority: KR10-2010-0138042 20101229
Main IPC: H01L29/786
IPC: H01L29/786 ; H01L21/336

Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors

Abstract:

A transistor includes a channel layer disposed above a gate and including an oxide semiconductor. A source electrode contacts a first end portion of the channel layer, and a drain electrode contacts a second end portion of the channel layer. The channel layer further includes a fluorine-containing region formed in an upper portion of the channel layer between the source electrode and the drain electrode.

Abstract(Chinese):

晶体管包括设置在栅极上方并包括氧化物半导体的沟道层。源电极接触沟道层的第一端部，漏极接触沟道层的第二端部。沟道层还包括形成在源极和漏极之间的沟道层的上部的含氟区。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管