发明申请
US20120171821A1 METHOD AND STRUCTURE FOR FORMING CAPACITORS AND MEMORY DEVICES ON SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATES
有权
在半导体绝缘体（SOI）衬底上形成电容器和存储器件的方法和结构
- 专利标题： METHOD AND STRUCTURE FOR FORMING CAPACITORS AND MEMORY DEVICES ON SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATES
- 专利标题（中）： 在半导体绝缘体（SOI）衬底上形成电容器和存储器件的方法和结构
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申请号： US13419624申请日： 2012-03-14
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公开(公告)号： US20120171821A1公开(公告)日： 2012-07-05
- 发明人: Kangguo Cheng , Ramachandra Divakaruni
- 申请人： Kangguo Cheng , Ramachandra Divakaruni
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/786
- IPC分类号： H01L21/786
摘要：
A device is provided that includes memory, logic and capacitor structures on a semiconductor-on-insulator (SOI) substrate. In one embodiment, the device includes a semiconductor-on-insulator (SOI) substrate having a memory region and a logic region. Trench capacitors are present in the memory region and the logic region, wherein each of the trench capacitors is structurally identical. A first transistor is present in the memory region in electrical communication with a first electrode of at least one trench capacitor that is present in the memory region. A second transistor is present in the logic region that is physically separated from the trench capacitors by insulating material. In some embodiments, the trench capacitors that are present in the logic region include decoupling capacitors and inactive capacitors. A method for forming the aforementioned device is also provided.